Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors

Three-dimensional concentration dependent diffusions and simultaneous chemical reactions in chemically-amplified photoresists are simulated. Fickian, a linearly increasing diffusivity and an exponentially increasing diffusivity due to free volume increase with T-BOC are considered. Two different grid to processor mappings are proposed in implementing the simulator on massively parallel processo...

Acid-Quencher Reaction-Diffusion during the Post-Exposure Bake of Chemically Amplified Resists Part 1: Initially linear concentration profiles

High aspect ratio micro/nano machining with proton beam writing on aqueous developable – easily stripped negative chemically-amplified resists

Proton beam writing (PBW) is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nano dimensions. PBW has the unique ability to maintain a straight path through 50 lm thick resist films, and is suitable for high aspect ratio micro(nano)-machining. TADEP resist is a new promising high aspect ratio chemically-amplified resist that can be developed in...

Resists, Developers and Removers

Positive resists form an indene carboxylic acid during exposure making them soluble in aqueous alkaline solutions. Therefore, positive resists develop where they have been exposed, while the unexposed areas remain on the substrate. Since positive resists do not cross-link, the resist structures rounden beyond their softening point of typically 100-130°C. Negative resists such as the AZ® nLOF 20...

Calibration of Chemically Amplified Resist Models